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NTE5460 Silicon Controlled Rectifier (SCR)
Description: The NTE5460 is designed primarily for half-wave AC control applications such as motor controls, heating controls, and power supply crowbar circuits. Features: D Glass Passivated Junction with Center Gate Fire for Greater Parameter Uniformity and Stability D Small, Rugged Construction for Low Thermal Resistance, High Heat Dissipation, and Durability D 300A Surge Current Capability D Insulated Package Simplifies Mounting Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (TJ = -40 to +125C, Note 1), VDRM . . . . . . . . . . . . . . . . . . 800V Repetitive Peak Reverse Voltage (TJ = -40 to +125C, Note 1), VRRM . . . . . . . . . . . . . . . . . . . 800V On-State RMS Current (TC = +70C, Full Cycle Sine Wave 50 to 60Hz, Note 2), IT(RMS) . . . . . 25A Peak Non-Repetitive Surge Current, ITSM (One Full Cycle, 60Hz, TC = +70C, Preceeded and Followed by Rated Current) . . . . 300A Circuit Fusing (t = 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375A2s Peak Gate Power (TC = +70C, Pulse Width = 10s), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power (TC = +70C, t = 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Peak Gate Current (TC = +70C, Pulse Width = 10s), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A RMS Isolation Voltage (TA = +25C, Relative Humidity 20%), V(ISO) . . . . . . . . . . . . . . . . . . . 1500V Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5C/W Typical Thermal Resistance, Case-to-Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2C/W Maximum Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 60C/W Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. Note 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Peak Forward Blocking Current Symbol IDRM IRRM VTM IGT VGT VGD IH tgt tq dv/dt Test Conditions VDRM = 800V, TJ = +25C VDRM = 800V, TJ = +125C Peak Reverse Blocking Current Forward "ON" Voltage DC Gate Trigger Current DC Gate Trigger Voltage Gate Non-Trigger Voltage Holding Current Turn-On Time Turn-Off Time VRRM = 800V, TJ = +125C ITM = 50A, Note 3 Anode Voltage = 12V, RL = 100 Anode Voltage = 12V, RL = 100 Anode Voltage = 800V, RL = 100, TJ = +125C Anode Voltage = 12V ITM = 25A, IGT = 40mA VDRM = 800V, ITM = 25A, IR = 25A VDRM = 800V, ITM = 25A, IR = 25A, TJ = +125C Critical Rate of Rise of Off-State Voltage Gate Open, VDRM = 800V, Exponential Waveform Min - - - - - - 0.2 - - - - - Typ - - - - - 0.8 - 20 1.5 15 35 100 Max 10 2 2 1.8 40 1.5 - 40 - - - - Unit A mA mA V mA V V mA s s s V/s
Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2)
.173 (4.4) Max .114 (2.9) Max
K
A
G
.531 (13.5) Min
.100 (2.54)
.059 (1.5) Max

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